3 edition of Microwave characterization and modeling of GaAs/AlGaAs heterojunction bipolar transistors found in the catalog.
Microwave characterization and modeling of GaAs/AlGaAs heterojunction bipolar transistors
by National Aeronautics and Space Administration, For sale by the National Technical Information Service in [Washington, DC], [Springfield, Va
Written in English
|Statement||Rainee N. Simons and Robert R. Romanofsky.|
|Series||NASA technical memorandum -- 100150.|
|Contributions||Romanofsky, Robert R., United States. National Aeronautics and Space Administration.|
|The Physical Object|
A new type of double-heterojunction lateral current injection GaAs/AIGaAs p-i-n ridge waveguide laser is described. The device employs intrinsic materials in the active region to reduce the parasites in the laser, thereby lowering the required threshold current and increasing the quantum efficiency of the device. GaAs-AlGaAs Epitaxial Growth for Microwave Applications Autorzy. Linh. The heterojunction bipolar transistor, proposed since in not matured in its technology. The new born selectively-doped heterojunction () is gaining in interest in both aspects, physics of the two-dimensional electron-gas (2DEG) and electronic applications.
Molecular beam epitaxial GaAs/AlGaAs heterojunction bipolar transistors on. The authors have investigated the characteristics and reproducibility of Si- doped p-type Road-blocks to Tera-level nanoelectronics. The national program for Tera-level Nanodevices (TND) serves as a frontier research resource to a broad range of nanoscale electronics areas. Design, modeling, and optimization principles for GaAs/AlGaAs heterojunction interfacial workfunction internal photoemission (HEIWIP) infrared detectors for a broad spectral region are presented. Both n-type andp-type detectors with a single emitter or multiemitters, grown on doped and undoped substrates are considered.
80 60 40 20 I D [mA] 0 Phase [°] 0 time, nsec mA Fig. 7. Class F simulation and measurements: simulated active cell current at GHz and load-pull measurements at MHz. A. Shimukovitch, P. Sakalas, P. Zampardi, M. Schröter and A. Matulionis "Investigation of electron delay in the base on noise performance in InGaP heterojunction bipolar transistors" Phys. Status Solidi RRL 4, No. 11, – () / DOI /pssr
For a living heritage
Electrical engineering license review
An American geological railway guide
Living on my camera
The knife with eyes
Directory of National Institutions of Educational Planning & Administration in Asia & the Pacific
Before you teach teen-agers.
Review of the ban on industrial nightwork for women
A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors • Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications.
The book details the accurate device modeling for HBTs and high level IC design using HBTs. MICROWAVE CHARACTERIZATION AND MODELING OF GaAs/AlGaAs HETLROJUNCTION BIPOLAR TRANSISTORS Rainee N. Simons and Robert R.
Romanofsky National Aeronautics and Space Administration Lewis Research Center Cleveland, Ohio 35 SUMMARY The characterization and modeling of a microwave GaAs/AlGaAs heterojunc- tion Bipolar. Get this from a library. Microwave characterization and modeling of GaAs/AlGaAs heterojunction bipolar transistors.
[Rainee Simons; Robert R Romanofsky; United States. National Aeronautics and Space Administration.]. Microwave Dower heterojunction hioolar transistors have been fabricated from high uniformity MnCVO GaAs/AlGaAs layers arown on 2 inch n+ substrates.
The similarities between GaAs/AlGaAs heterojunction bipolar transistors (HBTs) and GaAs-based light-emitting diodes (LEDs) and laser diodes (LDs) under current and temperature stress are demonstrated. Heterojunction Bipolar Transistors for Circuit Design Microwave Modeling and Parameter Extraction | Jianjun Gao | download | B–OK.
Download books for free. Find books. Heterojunctions in bipolar transistors allow improved values of current gain, base resistance, base transit time and Early voltage. If the bandgap in the emitter region exceeds the bandgap in the base region (W gE > W gB) fewer carriers will be injected into the emitter at a given transfer current density in comparison with a conventional transistor [1, 2]: the current gain increases.
Clive Poole, Izzat Darwazeh, in Microwave Active Circuit Analysis and Design, Heterojunction bipolar transistor. The heterojunction bipolar transistor (HBT) is a type of BJT that uses a different type of semiconductor material for the emitter and base regions, creating a heterojunction.
Clive Poole, Izzat Darwazeh, in Microwave Active Circuit Analysis and Design, Heterojunction bipolar transistor. The heterojunction bipolar transistor (HBT) is a type of BJT that uses a different type of semiconductor material for the emitter and base regions, creating a main benefit of the HBT is higher frequency performance, which is a.
Modeling the bipolar transistor. Amsterdam ; New York: Elsevier Scientific Pub. MLA Citation. Getreu, Ian E. Modeling the bipolar transistor / Ian E. Getreu Elsevier Scientific Pub.
Co Amsterdam ; New York Australian/Harvard Citation. Getreu, Ian E.Modeling the bipolar transistor / Ian E. Getreu Elsevier Scientific Pub. Book Search tips Selecting this option will search all publications across the Scitation platform Selecting this option will search all publications for the Publisher/Society in context.
Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence Microwave J.
38, (). While the use of bandgap engineering has been applied to bipolar transistors fabricated in elemental silicon; group IV-IV materials, i.e.
SiGe, SiC, SiGeC, etc.; and III-V compounds, i.e. GaAs, AlGaAs, InGaAs, InGaP, InP,etc., the application of this technology to high frequency and microwave diode structures has largely been ignored. GaAs/AlGaAs heterojunction connected in series with small- and large-area n–n+ homojunctions.
Both theoretically and experimentally, the frequency dependence of the voltage sensitivity of the microwave detector was established, which we relate with the intervalley electromotive force arising in Al Ga As.
The intervalley electromotive. Microwave Power GaAs/AlGaAs Heterojunction Bipolar Transistor Modelling Autorzy. Metcalfe, Hayes, Holden, Long. Treść / Zawartość. Warianty tytułu. Języki publikacji. Abstrakty.
To find out more, see our Privacy and Cookies policy. Millimeter-wave transistors with negative output resistance. Professor Dagli worked early on his carrier on high speed transistors with negative output resistance. He was the first to predict negative output resistance in heterojunction bipolar transistors due to transit delay effects .
The electronic properties of a GaAs/AlGaAs heterojunction bipolar transistor (HBT) structure have been studied by surface photovoltage spectroscopy.
The p-base band-gap narrowing has been determined and confirmed by numerical simulation. Based on the shape of the surface photovoltage spectrum, it is possible to monitor the doping level and evaluate the minority.
The gold-gold thermocompression process for power heterostructure bipolar transistor (HBT) flip chip has been modelled and simulated by finite element method. A model for plated gold creep has been determined on the basis of empirical data and model comparison. Electrical Transport Effects in the Epitaxial La Ca MnO 3 Films and La Ca MnO 3 /(LaNiO 3, RuO 2) Heterostructures p Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 29) Abstract Theoretical analysis of the optical switching characteristics expected for a GaAs/AlGaAs carrier-injected reflection-type optical switch employing a double-heterojunction bipolar transistor waveguide structure is presented on the basis of the.
However the GaAs-AlGaAs interfaces form a potential barrier for the generated carriers, which degrades the collection efficiency and sets a limit to the Al concentration.
A set of homojunction cells, GaAs and Al/sub /Ga/sub /As, and heterojunction cells, with Al concentration of 5, 10 and 15%, as well as a cell with quantum wells have.Chapter 7 from the book: Heterojunction Bipolar Transistors for Circuit Design: Microwave Modeling and parameter Extraction, John Wiley & Sons,pages.
ISBNISBNGaAs–AlGaAs heterojunctions. Since the basic results are identical for all the samples investigated we concentrate on a device where the electron gas used as a probe of the stray ﬁeld is located ; nm below the sample surface. The mobility of the electrons at K was m2/V s and the carrier density ns was m 2.
This gives an.